DETERMINATION OF TUNNEL-GENERATION RATE FROM GAAS PIN-STRUCTURES

被引：15

作者：

GAUL, L

HUBER, S

FREYER, J

CLAASSEN, M

机构：

[1] Technische Universität München, D-8000 München 2

来源：

SOLID-STATE ELECTRONICS | 1991年 / 34卷 / 07期

关键词：

D O I：

10.1016/0038-1101(91)90008-M

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The field-dependent tunnel-generation rate in GaAs has been experimentally determined from reverse-bias current measurements of MBE made submicron pin-structures. The obtained results, tunneling rate and temperature coefficient, agree well with theoretical calculations.

引用

页码：723 / 726

页数：4

共 11 条

[1] THE DETERMINATION OF IMPACT IONIZATION COEFFICIENTS IN (100) GALLIUM-ARSENIDE USING AVALANCHE NOISE AND PHOTOCURRENT MULTIPLICATION MEASUREMENTS
BULMAN, GE
ROBBINS, VM
STILLMAN, GE
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) : 2454 - 2466
[2] CLAASSEN M, 1987, AEU-ARCH ELEKTRON UB, V41, P380
[3] MILLIMETER-WAVE HETEROJUNCTION MITATT DIODES
DOGAN, NS
EAST, JR
ELTA, ME
HADDAD, GI
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1987, 35 (12) : 1308 - 1316
[4] Duke C. B., 1969, TUNNELING SOLIDS
[5] FREYER J, 1990, 20TH P EUR MICR C BU
[6] GAUL L, IN PRESS AEU
[7] GROTHE H, 1987, MIOP 87, pCHB5
[8] HUBER S, 1989, 19TH P EUR MICR C LO
[9] ZENER TUNNELING IN SEMICONDUCTORS
KANE, EO
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 12 (02) : 181 - 188
[10] PIERZINA R, 1987, AEU-ARCH ELEKTRON UB, V41, P242

← 1 2 →