MILLIMETER-WAVE HETEROJUNCTION MITATT DIODES

被引：7

作者：

DOGAN, NS

EAST, JR

ELTA, ME

HADDAD, GI

机构：

[1] WASHINGTON STATE UNIV, DEPT ELECT ENGN, PULLMAN, WA 99164 USA

[2] UNIV MICHIGAN, DEPT ELECT ENGN & COMP SCI, SOLID STATE ELECTR LAB, ANN ARBOR, MI 48109 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1987年 / 35卷 / 12期

关键词：

D O I：

10.1109/TMTT.1987.1133853

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1308 / 1316

页数：9

共 14 条

[1] GAAS IMPATT DIODES FOR 60 GHZ [J].

ADLERSTEIN, MG .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (03) :97-98

[2] THIN SKIN IMPATTS [J].

DELOACH, BC .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1970, MT18 (01) :72-&

[3] HIGH-FREQUENCY LIMITATIONS OF IMPATT, MITATT, AND TUNNETT MODE DEVICES [J].

ELTA, ME ;

HADDAD, GI .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1979, 27 (05) :442-449

[4] 150 GHZ GAAS MITATT SOURCE [J].

ELTA, ME ;

FETTERMAN, HR ;

MACROPOULOS, WV ;

LAMBERT, JJ .

ELECTRON DEVICE LETTERS, 1980, 1 (06) :115-116

[5] FUNCTION MINIMIZATION BY CONJUGATE GRADIENTS [J].

FLETCHER, R ;

REEVES, CM .

COMPUTER JOURNAL, 1964, 7 (02) :149-&

[6] SIMPLE APPROXIMATE METHOD OF ESTIMATING EFFECT OF CARRIER DIFFUSION IN IMPATT DIODES [J].

GUPTA, MS .

SOLID-STATE ELECTRONICS, 1975, 18 (04) :327-330

[7] A SILICON DIODE MICROWAVE OSCILLATOR [J].

JOHNSTON, RL ;

DELOACH, BC ;

COHEN, BG .

BELL SYSTEM TECHNICAL JOURNAL, 1965, 44 (02) :369-+

[8] READ DIODE-AN AVALANCHING TRANSIT-TIME NEGATIVE-RESISTANCE OSCILLATOR (SI IMPURITY EFFECTS E/T) [J].

LEE, CA ;

BATDORF, RL ;

WIEGMANN, W ;

KAMINSKY, G .

APPLIED PHYSICS LETTERS, 1965, 6 (05) :89-&

[9]

MAINS RK, 1983, INFRARED MILLIMETE 3, pCH3

[10] HIGH-FREQUENCY FALL-OFF OF IMPATT DIODE EFFICIENCY [J].

MISAWA, T .

SOLID-STATE ELECTRONICS, 1972, 15 (04) :457-&

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