HIGH-FREQUENCY LIMITATIONS OF IMPATT, MITATT, AND TUNNETT MODE DEVICES

被引：28

作者：

ELTA, ME ^{[1
]}

HADDAD, GI ^{[1
]}

机构：

[1] UNIV MICHIGAN,DEPT ELECT & COMP ENGN,ELECTRON PHYS LAB,ANN ARBOR,MI 48109

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1979年 / 27卷 / 05期

关键词：

D O I：

10.1109/TMTT.1979.1129646

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-frequency limitations of IMPATT and other mode devices are explored by concentrating on the details of the large-signal injected current pulse formation. Simple waveform models are given for injected current pulses of large widths, and various scaling relations are also included. The large-signal injected current pulse is calculated by use of a modified Read equation where attention is given to the effect of the intrinsic response time and the tunneling current. The poor high-frequency performance of GaAs devices is explained by postulating that the intrinsic response time is larger than expected. Tunneling current is shown to increase the high-frequency performance of GaAs diodes. Device efficiencies are calculated for specific diode structures by using a computer simulation which includes mixed avalanche-tunnel breakdown. The results for GaAs and Si devices are given, and the results are discussed and compared. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：442 / 449

页数：8

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