MIXED TUNNELING AND AVALANCHE MECHANISMS IN P-N-JUNCTIONS AND THEIR EFFECTS ON MICROWAVE TRANSIT-TIME DEVICES

被引:48
作者
ELTA, ME
HADDAD, GI
机构
关键词
D O I
10.1109/T-ED.1978.19156
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:694 / 702
页数:9
相关论文
共 25 条
[1]  
ALADINSK.VK, 1968, SOV PHYS SEMICOND+, V2, P517
[2]   EFFECTS OF TUNNELING ON HIGH-EFFICIENCY IMPATT AVALANCHE-DIODES [J].
CHIVE, M ;
CONSTANT, E ;
LEFEBVRE, M ;
PRIBETICH, J .
PROCEEDINGS OF THE IEEE, 1975, 63 (05) :824-826
[3]   INTERNAL FIELD EMISSION AT NARROW SILICON AND GERMANIUM P-N JUNCTIONS [J].
CHYNOWETH, AG ;
FELDMANN, WL ;
LEE, CA ;
LOGAN, RA ;
PEARSON, GL ;
AIGRAIN, P .
PHYSICAL REVIEW, 1960, 118 (02) :425-434
[4]   INTERNAL FIELD EMISSION IN SILICON P-N JUNCTIONS [J].
CHYNOWETH, AG ;
MCKAY, KG .
PHYSICAL REVIEW, 1957, 106 (03) :418-426
[5]   TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS [J].
CROWELL, CR ;
SZE, SM .
APPLIED PHYSICS LETTERS, 1966, 9 (06) :242-&
[6]   ELECTRONIC TUNING EFFECTS IN READ MICROWAVE AVALANCHE DIODE [J].
GILDEN, M ;
HINES, ME .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :169-&
[7]   ELECTRON AND HOLE IONIZATION RATES IN EPITAXIAL SILICON AT HIGH ELECTRIC-FIELDS [J].
GRANT, WN .
SOLID-STATE ELECTRONICS, 1973, 16 (10) :1189-1203
[8]   ZENER TUNNELING IN SEMICONDUCTORS [J].
KANE, EO .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 12 (02) :181-188
[9]   EFFECTS OF TUNNELING ON AN IMPATT OSCILLATOR [J].
KWOK, SP ;
HADDAD, GI .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (09) :3824-&
[10]   IONIZATION RATES OF HOLES + ELECTRONS IN SILICON [J].
LEE, CA ;
KLEIMACK, JJ ;
BATDORF, RL ;
WIEGMANN, W ;
LOGAN, RA .
PHYSICAL REVIEW, 1964, 134 (3A) :A761-+