THRESHOLDS OF IMPACT IONIZATION IN SEMICONDUCTORS

被引：151

作者：

BUDE, J ^{[1
]}

HESS, K ^{[1
]}

机构：

[1] UNIV ILLINOIS, COORDINATED SCI LAB, URBANA, IL 61801 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 08期

关键词：

D O I：

10.1063/1.351434

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using a first-principles approach to the ionization rate, we re-examine some of the prejudices concerning impact ionization and offer a new view of the role of thresholds. We also discuss trends of ionization coefficients related to the energy band structure for silicon and a number of III-V compounds.

引用

页码：3554 / 3561

页数：8

共 31 条

[1] THRESHOLD ENERGIES FOR ELECTRON-HOLE PAIR PRODUCTION BY IMPACT IONIZATION IN SEMICONDUCTORS
ANDERSON, CL
CROWELL, CR
[J]. PHYSICAL REVIEW B, 1972, 5 (06): : 2267 - &
[2] IONIZATION COEFFICIENTS OF ELECTRONS AND HOLES IN INP
ARMIENTO, CA
GROVES, SH
HURWITZ, CE
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (04) : 333 - 335
[3] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS
BARAFF, GA
[J]. PHYSICAL REVIEW, 1962, 128 (06): : 2507 - &
[4] HIGH-FIELD TRANSPORT IN GAAS, INP AND INAS
BRENNAN, K
HESS, K
[J]. SOLID-STATE ELECTRONICS, 1984, 27 (04) : 347 - 357
[5] BUDE J, IN PRESS PHYS REV
[6] Capasso F., 1985, SEMICONDUCTORS SEMIM, V22
[7] MEASUREMENT OF THE GAMMA-L SEPARATION IN GA-0.47IN-0.53 AS BY ULTRAVIOLET PHOTOEMISSION
CHENG, KY
CHO, AY
CHRISTMAN, SB
PEARSALL, TP
ROWE, JE
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (05) : 423 - 425
[8] COHEN M, 1965, PHYS REV, V141, P789
[9] ELECTRON AND HOLE IMPACT IONIZATION COEFFICIENTS IN INP DETERMINED BY PHOTOMULTIPLICATION MEASUREMENTS
COOK, LW
BULMAN, GE
STILLMAN, GE
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 589 - 591
[10] IMPACT IONIZATION THRESHOLDS IN SILICON AND GERMANIUM UNDER HYDROSTATIC-PRESSURE AND STRAIN
CZAJKOWSKI, IK
ALLAM, J
SILVER, M
ADAMS, AR
GELL, MA
[J]. IEE PROCEEDINGS-J OPTOELECTRONICS, 1990, 137 (01): : 79 - 87

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