THRESHOLDS OF IMPACT IONIZATION IN SEMICONDUCTORS

被引：151

作者：

BUDE, J ^{[1
]}

HESS, K ^{[1
]}

机构：

[1] UNIV ILLINOIS, COORDINATED SCI LAB, URBANA, IL 61801 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 08期

关键词：

D O I：

10.1063/1.351434

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using a first-principles approach to the ionization rate, we re-examine some of the prejudices concerning impact ionization and offer a new view of the role of thresholds. We also discuss trends of ionization coefficients related to the energy band structure for silicon and a number of III-V compounds.

引用

页码：3554 / 3561

页数：8