Electronic properties of antidot lattices fabricated by atomic force lithography

被引：26

作者：

Dorn, A ^{[1
]}

Sigrist, M

Fuhrer, A

Ihn, T

Heinzel, T

Ensslin, K

Wegscheider, W

Bichler, M

机构：

[1] ETH Zurich, Solid State Phys Lab, CH-8093 Zurich, Switzerland

[2] Univ Regensburg, D-93040 Regensburg, Germany

[3] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 02期

关键词：

D O I：

10.1063/1.1432767

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Antidot lattices were fabricated by atomic force lithography using local oxidation. High quality finite 20x20 lattices are demonstrated with periods of 300 nm. The low-temperature magnetoresistance shows well developed commensurability oscillations as well as a quenching of the Hall effect around zero magnetic field. In addition, we find B-periodic oscillations superimposed on the classical commensurability peaks at temperatures as high as 1.7 K. These observations indicate the high electronic quality of our samples. (C) 2002 American Institute of Physics.

引用

页码：252 / 254

页数：3

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