Exploration of a new method in determining the glass transition temperature of BMGs by electrical resistivity

被引:21
作者
Guo, J [1 ]
Zu, FQ [1 ]
Chen, ZH [1 ]
Zheng, SB [1 ]
Yuan, Y [1 ]
机构
[1] Hefei Univ Technol, Coll Mat Sci & Engn, Hefei 230009, Anhui, Peoples R China
关键词
bulk metallic glass; electrical resistivity; glass transition temperature; temperature coefficient of resistivity;
D O I
10.1016/j.ssc.2005.03.052
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Based on a brief retrospect of the method in establishing T-g of the bulk metallic glasses (BMGs), some perplexities concerning this are pointed out. With the experimental results of Zr-Al-Ni-Cu-X (Nb,Ti) BMGs, a electrical resistivity method is proposed to determine the glass transition temperature of BMGs. With the method, we define two kinds of characteristic temperature related to the glass transition, Tg-dep,p and Tg-int respectively. By comparing Tg-dep and Tg-int with T-g determined by the DSC method, we have found that, for the same alloy at the same heating rate, Tg-dep is very close to Tg-onset while Tg-int is approximate to Tg-mid. As a method to determine the glass transition temperature, the electrical resistivity method has proved to be more convenient and practical in comparison with the DSC method, especially when the DSC curve cannot show the glass transition character of BMGs. In addition, we would emphasize that when we refer to T, it is necessary to expatiate on the way of denoting the glass transition temperature, such as Tg-dep or Tg-int (Tg-onset or Tg-mid), and on the heating rate, in order to avoid ambiguity. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码:103 / 107
页数:5
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