Interpreting the oxygen partial pressure around a molten silicon drop in terms of its surface tension

被引:16
作者
Azami, T [1 ]
Hibiya, T [1 ]
机构
[1] NEC Corp Ltd, Fundamental Res Labs, Tsukuba, Ibaraki 3058501, Japan
关键词
surfaces; semiconducting silicon;
D O I
10.1016/S0022-0248(01)01557-3
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The oxygen partial pressure around a molten silicon drop was determined from the inlet (P-O2(inlet))and outlet (P-O2(exit)) pressures of a furnace under precisely controlled gas flow rate. It was found that P-O2(exit) is much lower than P-O2(inlet) and that measured P-O2(exit) depends on gas flow rate, but P-O2(inlet) does not. This dependence can be explained by an oxygen transfermodel using the Peclet number. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:417 / 424
页数:8
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