Atomic structure of graphene on SiO2

被引:1318
作者
Ishigami, Masa [1 ]
Chen, J. H.
Cullen, W. G.
Fuhrer, M. S.
Williams, E. D.
机构
[1] Univ Maryland, Mat Res Sci & Engn Ctr, College Pk, MD 20742 USA
[2] Univ Maryland, Dept Phys, College Pk, MD 20742 USA
[3] Univ Maryland, Ctr Superconduct Res, College Pk, MD 20742 USA
关键词
D O I
10.1021/nl070613a
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We employ scanning probe microscopy to reveal atomic structures and nanoscale morphology of graphene-based electronic devices (i.e., a graphene sheet supported by an insulating silicon dioxide substrate) for the first time. Atomic resolution scanning tunneling microscopy images reveal the presence of a strong spatially dependent perturbation, which breaks the hexagonal lattice symmetry of the graphitic lattice. Structural corrugations of the graphene sheet partially conform to the underlying silicon oxide substrate. These effects are obscured or modified on graphene devices processed with normal lithographic methods, as they are covered with a layer of photoresist residue. We enable our experiments by a novel cleaning process to produce atomically clean graphene sheets.
引用
收藏
页码:1643 / 1648
页数:6
相关论文
共 26 条
[1]   Structure factor of flexible membranes [J].
Aranda-Espinoza, H ;
Lavallee, D .
EUROPHYSICS LETTERS, 1998, 43 (03) :355-359
[2]   Electronic confinement and coherence in patterned epitaxial graphene [J].
Berger, Claire ;
Song, Zhimin ;
Li, Xuebin ;
Wu, Xiaosong ;
Brown, Nate ;
Naud, Cecile ;
Mayou, Didier ;
Li, Tianbo ;
Hass, Joanna ;
Marchenkov, Atexei N. ;
Conrad, Edward H. ;
First, Phillip N. ;
de Heer, Wait A. .
SCIENCE, 2006, 312 (5777) :1191-1196
[3]  
CASTRO EV, 2007, BIASED BILAYER GRAPH
[4]   FULLY COLLAPSED CARBON NANOTUBES [J].
CHOPRA, NG ;
BENEDICT, LX ;
CRESPI, VH ;
COHEN, ML ;
LOUIE, SG ;
ZETTL, A .
NATURE, 1995, 377 (6545) :135-138
[5]  
GOLDBERG JL, 1991, SURF SCI, V249, pL285, DOI 10.1016/0039-6028(91)90815-A
[6]  
HUANG EH, 2006, CONDMAT0610834
[7]   A 1/F NOISE TECHNIQUE TO EXTRACT THE OXIDE TRAP DENSITY NEAR THE CONDUCTION-BAND EDGE OF SILICON [J].
JAYARAMAN, R ;
SODINI, CG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (09) :1773-1782
[8]   Broken symmetries in scanning tunneling images of carbon nanotubes [J].
Kane, CL ;
Mele, EJ .
PHYSICAL REVIEW B, 1999, 59 (20) :12759-12762
[9]  
Kim W, 2002, NANO LETT, V2, P703, DOI [10.1021/nl025602q, 10.1021/n1025602q]
[10]   SCANNING TUNNELING MICROSCOPY OBSERVATION OF SELF-AFFINE FRACTAL ROUGHNESS IN ION-BOMBARDED FILM SURFACES [J].
KRIM, J ;
HEYVAERT, I ;
VANHAESENDONCK, C ;
BRUYNSERAEDE, Y .
PHYSICAL REVIEW LETTERS, 1993, 70 (01) :57-60