Anisotropic magnetoresistance in lightly doped La2-xSrxCuO4:: Impact of antiphase domain boundaries on the electron transport -: art. no. 247003

被引：72

作者：

Ando, Y ^{[1
]}

Lavrov, AN ^{[1
]}

Komiya, S ^{[1
]}

机构：

[1] Cent Res Inst Elect Power Ind, Tokyo 2018511, Japan

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 90卷 / 24期

关键词：

D O I：

10.1103/PhysRevLett.90.247003

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Detailed behavior of the magnetoresistance (MR) is studied in lightly doped antiferromagnetic La1.99Sr0.01CuO4, where, thanks to the weak-ferromagnetic moment due to spin canting, the antiferromagnetic (AF) domain structure can be manipulated by the magnetic field. The MR behavior demonstrates that CuO2 planes indeed contain antiphase AF-domain boundaries in which charges are confined, forming antiphase stripes. The data suggest that a high magnetic field turns the antiphase stripes into in-phase stripes, and the latter appear to give better conduction than the former, which challenges the notion that the antiphase character of stripes facilitates charge motion.

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