Mobility of the doped holes and the antiferromagnetic correlations in underdoped high-Tc cuprates -: art. no. 017001

被引:240
作者
Ando, Y [1 ]
Lavrov, AN [1 ]
Komiya, S [1 ]
Segawa, K [1 ]
Sun, XF [1 ]
机构
[1] Cent Res Inst Elect Power Ind, Tokyo 2018511, Japan
关键词
D O I
10.1103/PhysRevLett.87.017001
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
emergence and the evolution of the metallic charge transport in the La2-xSrxCuO4 system from lightly to optimally doped samples (x = 0.01-0.17) are studied. We demonstrate that in high-quality single crystals the in-plane resistivity shows a metallic behavior for all values of x at moderate temperatures and that the hole mobility at 300 K changes only by a factor of 3 from x = 0.01 to 0.17, where its x dependence is found to be intriguingly similar to that of the inverse antiferromagnetic correlation length. We discuss an incoherent-metal picture and a charged-stripe scenario as candidates to account for these peculiar features.
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收藏
页码:1 / 017001
页数:4
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