A large angle convergent beam electron diffraction study of the core nature of dislocations in 3C-SiC

被引:49
作者
Ning, XJ
Pirouz, P
机构
[1] Dept. of Mat. Sci. and Engineering, Case Western Reserve University, Cleveland
基金
美国国家航空航天局;
关键词
D O I
10.1557/JMR.1996.0110
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Dislocations produced by 1300 degrees C indentation of the silicon-terminated (111) face of 3C-SiC were investigated by transmission electron microscopy. They were all found to be either widely separated partial dislocation pairs, or else, arrays of single partial dislocation half-loops on neighboring parallel slip planes and having the same Burgers vector. It was concluded that in the latter case, each array consisted of leading partial dislocations which had nucleated without accompanying trailing partial dislocations. The core nature of both dissociated dislocations and arrays of single partial dislocations has been determined by the technique of large angle convergent beam electron diffraction. The results indicate that the core of all single partial dislocation half-loops constituting an array consists of silicon atoms. It is concluded that, with the present deformation geometry, the Si-core partial dislocations are preferentially nucleated before the C-core partial dislocations. In the case of a dissociated dislocation, when a pair of partials was present, electron microscopy observations revealed that the morphology of the two partial dislocations was very different; while the Si-core partials were smooth, the C-core partial dislocations had a zig-zag morphology.
引用
收藏
页码:884 / 894
页数:11
相关论文
共 38 条
  • [1] ALEXANDER H, 1979, J PHYS PARIS C, V40
  • [2] DISLOCATIONS IN SILICON CARBIDE
    AMELINCKX, S
    STRUMANE, G
    WEBB, WW
    [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (08) : 1359 - 1370
  • [3] CHERNS D, 1986, 11TH P INT C EL MICR, V1, P721
  • [4] DISLOCATION CONTRAST IN LARGE-ANGLE CONVERGENT-BEAM ELECTRON-DIFFRACTION PATTERNS
    CHOU, CT
    PRESTON, AR
    STEEDS, JW
    [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1992, 65 (04): : 863 - 888
  • [5] FEUILLET G, 1982, THESIS U OXFORD
  • [6] CALCULATION OF THE LOCALIZED ELECTRONIC STATES ASSOCIATED WITH STATIC AND MOVING DISLOCATIONS IN SILICON
    HEGGIE, M
    JONES, R
    [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 48 (04): : 379 - 390
  • [7] SOLITONS AND THE ELECTRICAL AND MOBILITY PROPERTIES OF DISLOCATIONS IN SILICON
    HEGGIE, M
    JONES, R
    [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 48 (04): : 365 - 377
  • [8] Hirsch P.B., 1981, I PHYS C SER, V60, P29
  • [9] INDENTATION PLASTICITY AND POLARITY OF HARDNESS ON (111) FACES OF GAAS
    HIRSCH, PB
    PIROUZ, P
    ROBERTS, SG
    WARREN, PD
    [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 52 (03): : 759 - 784
  • [10] Hirth J. P., 1968, Theory of Dislocations