SOLITONS AND THE ELECTRICAL AND MOBILITY PROPERTIES OF DISLOCATIONS IN SILICON

[1] TEM OF DISLOCATIONS UNDER HIGH STRESS IN GERMANIUM AND DOPED SILICON [J]. JOURNAL OF MICROSCOPY-OXFORD, 1980, 118 (JAN): : 13 - 21

[2] ALLAN G, 1980, I PHYS C SER, V59, P199

[3] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (15) : 953 - 955

[4] ANSTIS GR, 1981, I PHYS C SERIES, V60, P15

[5] SIMPLE PARAMETRIZED MODEL FOR JAHN-TELLER SYSTEMS - VACANCY IN P-TYPE SILICON [J]. PHYSICAL REVIEW B, 1980, 21 (08): : 3563 - 3570

[6] BARAFF GA, 1980, PHYS REV B, V21, P5562

[7] DISLOCATIONS IN SEMICONDUCTORS AS STUDIED BY WEAK-BEAM ELECTRON-MICROSCOPY [J]. JOURNAL DE PHYSIQUE, 1979, 40 : 11 - 18

[8] EREMENKO VG, 1977, JETP LETT, V26, P65

[9] EFFECT OF IMPURITIES ON INDIVIDUAL DISLOCATION MOBILITY IN SILICON [J]. PHYSICA STATUS SOLIDI, 1969, 35 (01): : 79 - +

[10] GEORGE A, 1972, PHYS STATUS SOLIDI B, V53, P483, DOI 10.1002/pssb.2220530209

[1] TEM OF DISLOCATIONS UNDER HIGH STRESS IN GERMANIUM AND DOPED SILICON [J]. JOURNAL OF MICROSCOPY-OXFORD, 1980, 118 (JAN): : 13 - 21

[2] ALLAN G, 1980, I PHYS C SER, V59, P199

[3] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (15) : 953 - 955

[4] ANSTIS GR, 1981, I PHYS C SERIES, V60, P15

[5] SIMPLE PARAMETRIZED MODEL FOR JAHN-TELLER SYSTEMS - VACANCY IN P-TYPE SILICON [J]. PHYSICAL REVIEW B, 1980, 21 (08): : 3563 - 3570

[6] BARAFF GA, 1980, PHYS REV B, V21, P5562

[7] DISLOCATIONS IN SEMICONDUCTORS AS STUDIED BY WEAK-BEAM ELECTRON-MICROSCOPY [J]. JOURNAL DE PHYSIQUE, 1979, 40 : 11 - 18

[8] EREMENKO VG, 1977, JETP LETT, V26, P65

[9] EFFECT OF IMPURITIES ON INDIVIDUAL DISLOCATION MOBILITY IN SILICON [J]. PHYSICA STATUS SOLIDI, 1969, 35 (01): : 79 - +

[10] GEORGE A, 1972, PHYS STATUS SOLIDI B, V53, P483, DOI 10.1002/pssb.2220530209