Demonstrating a tunneling magneto-resistive read head

被引：37

作者：

Song, D ^{[1
]}

Nowak, J ^{[1
]}

Larson, R ^{[1
]}

Kolbo, P ^{[1
]}

Chellew, R ^{[1
]}

机构：

[1] Seagate Technol Inc, Bloomington, MN 55435 USA

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2000年 / 36卷 / 05期

关键词：

(GMR) heads; magnetic spin tunneling; heads test and characterization;

D O I：

10.1109/20.908503

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate the feasibility of a read head using a high-resistance spin-dependent tunneling (SDT) junction. The head consists of a 1.5 mum or 1.7 mum wide flux guide on top of the junction. The junction is about 0.8 mum wide and varies in height. There is a pinned layer at the bottom of the stack. The tunnel barrier is made by plasma oxidation of about 10 Angstrom of aluminum. The barrier has resistance of about 3.7 k Omega mum(2), leading to a typical head resistance of a few k Omega. The heads are lapped to the edge of the junction, and show 5% to 8 % TMR during transfer curve measurement. Isolated pulses during the spin stand test shows large signal up to 5.7 mV, We find a voltage sensing preamp is a better choice over a current sensing one.

引用

页码：2545 / 2548

页数：4

共 10 条

[1]

MALLARY ML, THEORETICAL SIGNAL N

[2] Temperature dependence of giant magnetoresistance properties of NiMn pinned spin valves [J].