Large magnetoresistance of the ferromagnetic intermetallics URhSi and URhGe

被引：15

作者：

Tran, VH ^{[1
]}

Troc, R ^{[1
]}

机构：

[1] Polish Acad Sci, W Trzebiatowski Inst Low Temp & Struct Res, PL-50950 Wroclaw, Poland

来源：

PHYSICAL REVIEW B | 1998年 / 57卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.57.11592

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

URhSi and URhGe have been studied by means of magnetization and magnetoresistance measurements. These compounds undergo a magnetic phase transition into the ferromagnetic state at 9.5 and 9.0 K, respectively. A large magnetoresistance near their Curie temperature is observed. At B = 8 T, the maximum magnetoresistance is -36% at 10.3 K for URhSi and -40% at 9.5 K for URhGe. We propose that this large magnetoresistance is a consequence of two kinds of scattering: the spin-disorder scattering and scattering from magnetic polarons.

引用

页码：11592 / 11597

页数：6

共 35 条

[11] LATTICE EFFECTS ON THE MAGNETORESISTANCE IN DOPED LAMNO3 [J].

HWANG, HY ;

CHEONG, SW ;

RADAELLI, PG ;

MAREZIO, M ;

BATLOGG, B .

PHYSICAL REVIEW LETTERS, 1995, 75 (05) :914-917

[12] GIANT MAGNETORESISTANCE IN LA1-XSRXMNOZ FILMS NEAR ROOM-TEMPERATURE [J].

JU, HL ;

KWON, C ;

LI, Q ;

GREENE, RL ;

VENKATESAN, T .

APPLIED PHYSICS LETTERS, 1994, 65 (16) :2108-2110

[13] SUCCESSIVE MAGNETIC TRANSITIONS AND LARGE REDUCTION OF RESISTIVITY WITH FERROMAGNETIC ORDERING IN UPDGE [J].

KAWAMATA, S ;

IWASAKI, H ;

KOBAYASHI, N ;

MITSUGASHIRA, T ;

MUTO, Y .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1989, 58 (08) :2654-2657

[14] ELECTRICAL-RESISTIVITY OF UTGE (T-NI, PD, PT) SINGLE-CRYSTALS [J].

KAWAMATA, S ;

IWASAKI, H ;

KOBAYASHI, N ;

ISHIMOTO, K ;

YAMAGUCHI, Y ;

KOMATSUBARA, T .

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1992, 104 :53-54

[15]

LAM DL, 1974, ACTINIDES ELECT STRU, V2, P176

[16] Polaron transport and lattice dynamics in colossal-magnetoresistance manganites [J].

Lee, JD ;

Min, BI .

PHYSICAL REVIEW B, 1997, 55 (18) :12454-12459

[17] Structure, electron-transport properties, and giant magnetoresistance of hole-doped LaMnO3 systems [J].

Mahendiran, R ;

Tiwary, SK ;

Raychaudhuri, AK ;

Ramakrishnan, TV ;

Mahesh, R ;

Rangavittal, N ;

Rao, CNR .

PHYSICAL REVIEW B, 1996, 53 (06) :3348-3358

[18] Magnetoresistance in GdNi: Magnetic-polaronic-like effect near the Curie temperature and low-temperature sign reversal [J].

Mallik, R ;

Sampathkumaran, EV ;

Paulose, PL ;

Nagarajan, V .

PHYSICAL REVIEW B, 1997, 55 (14) :R8650-R8653

[19] VERY LARGE MAGNETORESISTANCE IN PEROVSKITE-LIKE LA-CA-MN-O THIN-FILMS [J].

MCCORMACK, M ;

JIN, S ;

TIEFEL, TH ;

FLEMING, RM ;

PHILLIPS, JM ;

RAMESH, R .

APPLIED PHYSICS LETTERS, 1994, 64 (22) :3045-3047

[20] DOUBLE EXCHANGE ALONE DOES NOT EXPLAIN THE RESISTIVITY OF LA1-XSRXMNO3 [J].

MILLIS, AJ ;

LITTLEWOOD, PB ;

SHRAIMAN, BI .

PHYSICAL REVIEW LETTERS, 1995, 74 (25) :5144-5147

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