Type-I and type-II interband transitions in CdSe/ZnTe quantum well structures

被引：16

作者：

Haetty, J

Lee, EH

Luo, H

Petrou, A ^{[1
]}

Warnock, J

机构：

[1] SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USA

[2] IBM Corp, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA

来源：

SOLID STATE COMMUNICATIONS | 1998年 / 108卷 / 04期

关键词：

quantum wells; semiconductors; optical properties; recombination and trapping; luminescence;

D O I：

10.1016/S0038-1098(98)00349-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have studied the luminescence intensity associated with type-I and type-II interband transitions in several CdSe/ZnTe quantum well structures as a function of CdSe layer thickness. It was found that as the CdSe layers become wider, the intensity of the type-I transition increases, while that of the type-II transition decreases. These results are analyzed in terms of a variational calculation which takes into account the Coulomb interaction between the electrons and holes that participate in the interband transitions. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：205 / 209

页数：5

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