Homogeneous linewidth of the direct exciton in a type-II ZnSe/BeTe quantum well

被引：20

作者：

Platonov, AV

Yakovlev, DR ^{[1
]}

Zehnder, U

Kochereshko, VP

Ossau, W

Fischer, F

Litz, T

Waag, A

Landwehr, G

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 184卷

基金：

俄罗斯基础研究基金会;

关键词：

beryllium chalcogenides; type-II quantum wells; exciton linewidth;

D O I：

10.1016/S0022-0248(98)80166-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We present an optical study of novel ZnSe/BeTe heterostructures with a type-II band alignment based on beryllium chalcogenides. A. strong exciton transition involving a confined electron and a quasibound hole state (both in the ZnSe layer) is observed in photoluminescence, photoluminescence excitation and reflectivity spectra. This exciton state is drastically broadened by increasing temperature due to enhanced exciton-acoustic phonon interaction. Pronounced features related to the quasibound hole states in the ZnSe layer (upto n = 4) are detected. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：801 / 805

页数：5

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