Photoinduced conductivity changes in carbon nanotube transistors

被引：57

作者：

Shim, M ^{[1
]}

Siddons, GP ^{[1
]}

机构：

[1] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 17期

关键词：

D O I：

10.1063/1.1622450

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoinduced conductivity changes in single-walled carbon nanotube transistors have been examined. Low-intensity ultraviolet light significantly reduces the p-channel conductance while simultaneously increasing the n-channel conductance. A combination of optical absorption and electron transport measurements reveals that these changes occur without variations in dopant concentrations. Possible sites of oxygen photodesorption and its implications on the observed electronic properties of nanotubes are considered. (C) 2003 American Institute of Physics.

引用

页码：3564 / 3566

页数：3

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