Annealing effect on the property of ultraviolet and green emissions of ZnO thin films

被引：575

作者：

Kang, HS ^{[1
]}

Kang, JS ^{[1
]}

Kim, JW ^{[1
]}

Lee, SY ^{[1
]}

机构：

[1] Yonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 95卷 / 03期

关键词：

D O I：

10.1063/1.1633343

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The mechanism of ultraviolet (UV) and green emission of ZnO thin films deposited on (001) sapphire substrates by pulsed laser deposition was investigated by using postannealing treatment at various annealing temperatures after deposition. Structural, electrical, and optical properties of ZnO films have been also observed. As the postannealing temperature increased, the intensity of UV (380 nm) peak and the carrier concentration were decreased while the intensity of the visible (about 490-530 nm) peak and the resistivity were increased. The role of oxygen in ZnO thin film during the annealing process was important to the change of optical properties. The mechanism of the luminescence suggested that UV luminescence of ZnO thin film was related to the transition from near band edge to valence band, and green luminescence of ZnO thin film was caused by the transition from deep donor level to valence band due to oxygen vacancies. The activation energy derived by using the variation of green emission intensity was 1.19 eV. (C) 2004 American Institute of Physics.

引用

页码：1246 / 1250

页数：5

共 25 条

[1] Azaroff L.V., 1960, Introduction to Solids, P371
[2] Optically pumped lasing of ZnO at room temperature
Bagnall, DM
Chen, YF
Zhu, Z
Yao, T
Koyama, S
Shen, MY
Goto, T
[J]. APPLIED PHYSICS LETTERS, 1997, 70 (17) : 2230 - 2232
[3] Bhattacharya P., 1997, SEMICONDUCTOR OPTOEL, P22
[4] Egehaaf H. J., 1996, J CRYST GROWTH, V161, P190
[5] CONTROL OF PREFERRED ORIENTATION FOR ZNOX FILMS - CONTROL OF SELF-TEXTURE
FUJIMURA, N
NISHIHARA, T
GOTO, S
XU, JF
ITO, T
[J]. JOURNAL OF CRYSTAL GROWTH, 1993, 130 (1-2) : 269 - 279
[6] Preferred orientation and piezoelectricity in sputtered ZnO films
Gardeniers, JGE
Rittersma, ZM
Burger, GJ
[J]. JOURNAL OF APPLIED PHYSICS, 1998, 83 (12) : 7844 - 7854
[7] CHARACTERIZATION OF INTRINSIC AND IMPURITY DEEP LEVELS IN ZNSE AND ZNO CRYSTALS BY NONLINEAR SPECTROSCOPY
GAVRYUSHIN, V
RACIUKAITIS, G
JUODZBALIS, D
KAZLAUSKAS, A
KUBERTAVICIUS, V
[J]. JOURNAL OF CRYSTAL GROWTH, 1994, 138 (1-4) : 924 - 933
[8] EFFECT OF ANNEALING ON THE AC LEAKAGE COMPONENTS OF THE ZNO VARISTOR .1. RESISTIVE CURRENT
GUPTA, TK
STRAUB, WD
[J]. JOURNAL OF APPLIED PHYSICS, 1990, 68 (02) : 845 - 850
[9] CHARACTERIZATION OF PULSED LASER DEPOSITED ZINC-OXIDE
IANNO, NJ
MCCONVILLE, L
SHAIKH, N
PITTAL, S
SNYDER, PG
[J]. THIN SOLID FILMS, 1992, 220 (1-2) : 92 - 99
[10] *JCPDS, 361451 JCPDS

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