Fast response H2S gas sensing characteristics with ultra-thin CuO islands on sputtered SnO2

被引:82
作者
Chowdhuri, A [1 ]
Gupta, V [1 ]
Sreenivas, K [1 ]
机构
[1] Univ Delhi, Dept Phys & Astrophys, Delhi 110007, India
关键词
Cu-SnO2; inter-digital electrodes; H2S;
D O I
10.1016/S0925-4005(03)00226-0
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Response characteristics of undoped SnO2, are compared with two different types of Cu-SnO2 thin film bilayer structures: (a) SnO2 surface covered by an ultra-thin (similar to10 nm) Cu layer, and (b) SnO2 surface covered with thin Cu dots, and the bilayers were annealed in air/O-2 to form CuO. Response speed for sensing H2S gas concentration in the range 20-1200 ppm was measured using platinum (Pt) inter-digital electrodes underneath the SnO2 film. SnO2 film with CuO dotted islands is found to exhibit a high sensitivity of 7.4 x 10(3) at 150 degreesC, and a fast response time of 15 s to 20 ppm of H2S, and the recovery time is approximately 118 s. The high sensitivity and the fast response are shown to be primarily due to a dominant role played by the spill-over mechanism. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:572 / 579
页数:8
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