Towards upconversion for amorphous silicon solar cells

被引：118

作者：

de Wild, J. ^{[1
]}

Meijerink, A. ^{[1
]}

Rath, J. K. ^{[1
]}

van Sark, W. G. J. H. M. ^{[2
]}

Schropp, R. E. I. ^{[1
]}

机构：

[1] Univ Utrecht, Fac Sci, Debye Inst Nanomat Sci, NL-3508 TA Utrecht, Netherlands

[2] Univ Utrecht, Copernicus Inst Sustainable Dev & Innovat, NL-3584 CS Utrecht, Netherlands

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2010年 / 94卷 / 11期

关键词：

Upconversion; Amorphous silicon; GREEN;

D O I：

10.1016/j.solmat.2010.06.006

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Upconversion of subbandgap light of thin film single junction amorphous silicon solar cells may enhance their performance in the near infrared (NIR). In this paper we report on the application of the NIR-vis upconverter beta-NaYF4:Yb3+(18%) Er3+(2%) at the back of an amorphous silicon solar cell in combination with a white back reflector and its response to infrared irradiation. Current-voltage measurements and spectral response measurements were done on experimental solar cells. An enhancement of 10 mu A/cm(2) was measured under illumination with a 980 nm diode laser (10 mW). A part of this was due to defect absorption in localized states of the amorphous silicon. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：1919 / 1922

页数：4

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