Transport of sputtered atoms in facing targets sputtering geometry: A numerical simulation study

被引：33

作者：

Nathan, SS ^{[1
]}

Rao, GM ^{[1
]}

Mohan, S ^{[1
]}

机构：

[1] Indian Inst Sci, Dept Instrumentat, Vacuum & Thin Films Lab, Bangalore 560012, Karnataka, India

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 01期

关键词：

D O I：

10.1063/1.368061

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The transport of sputtered Ag atoms in the facing targets sputtering geometry studied by Monte Carlo simulation is presented. The atoms are ejected with a cosine distribution and undergo many collisions with the background argon gas atoms. The collisions are simulated with a Born-Mayer interaction potential. The model predicts the flux of Ag atoms arriving at the substrate, their energy, and angular distribution. These results have been compared with experimental results reported earlier. Similar computations have been extended to study the complex transport of multicomponent Y, Ba, and Cu in oxygen gas during YBa2Cu3O7-x sputter deposition. (C) 1998 American Institute of Physics.

引用

页码：564 / 571

页数：8

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