Simulation of topography evolution and damage formation during TEM sample preparation using focused ion beams

被引：22

作者：

Boxleitner, W

Hobler, G

Klüppel, V

Cerva, H

机构：

[1] Vienna Univ Technol, Inst Festkorperelekt, A-1040 Vienna, Austria

[2] Siemens AG, Corp Technol, D-81730 Munich, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2001年 / 175卷

关键词：

focused ion beam; ion beam milling; sputtering; Monte Carlo simulation; topography simulation;

D O I：

10.1016/S0168-583X(01)00334-2

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Our recently developed simulation code FIBSIM is applied to topics related to transmission electron microscopy (TEM) sample preparation using focused ion beams (FIB). FIBSIM combines dynamic Monte Carlo simulation of collision cascades with two-dimensional, cell-based topography simulation. The influence of the scanning mode and of the beam current profile on the evolution of the surface contour is investigated. Furthermore, amorphous zones in silicon samples and damaged regions are predicted for different beam energies of 10, 30 and 50 keV. The thickness of the predicted amorphous regions is in good agreement with experimental TEM data. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：102 / 107

页数：6

共 10 条

[1]

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[2]

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