COMPARISON OF TRANSMISSION ELECTRON-MICROSCOPE CROSS-SECTIONS OF AMORPHOUS REGIONS IN ION-IMPLANTED SILICON WITH POINT-DEFECT DENSITY CALCULATIONS

被引：38

作者：

CERVA, H ^{[1
]}

HOBLER, G ^{[1
]}

机构：

[1] UNIV TECHNOL VIENNA,INST ALLGEMEINE ELEKTROTECH & ELEKT,A-1040 VIENNA,AUSTRIA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1992年 / 139卷 / 12期

关键词：

D O I：

10.1149/1.2069134

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The width of the amorphous zone in the near-surface region of (100) silicon and polycrystalline silicon formed during high-dose silicon, phosphorus, or arsenic implantation is measured by cross-sectional transmission electron microscopy. Various technologically important examples were selected for this study. Comparison with point-defect density calculations yields a critical point-defect density for the crystalline-to-amorphous transition of 1. 15 . 10(22) Cm-3 for all implantations. The width of the amorphous zone may be predicted for Si+, P+, and As+ implants with an accuracy of less than 5 %. The calculation reproduce perfectly the two-dimensional shape of the amorphous/crystalline interface below an implantation mask edge.

引用

页码：3631 / 3638

页数：8

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