TWO-DIMENSIONAL MODELING OF ION-IMPLANTATION INDUCED POINT-DEFECTS

被引：48

作者：

HOBLER, G

SELBERHERR, S

机构：

来源：

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1988年 / 7卷 / 02期

关键词：

D O I：

10.1109/43.3147

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

收藏

页码：174 / 180

页数：7

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