3D-SIMULATIONS OF ION-IMPLANTATION PROCESSES

被引：10

作者：

CLAVERIE, A ^{[1
]}

VIEU, C ^{[1
]}

BEAUVILLAIN, J ^{[1
]}

机构：

[1] CNRS,L2M,F-92220 BAGNEUX,FRANCE

来源：

APPLIED SURFACE SCIENCE | 1989年 / 43卷

关键词：

D O I：

10.1016/0169-4332(89)90198-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：106 / 110

页数：5

共 15 条

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[4]

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[5]

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[6] CROSS-SECTIONAL HIGH-RESOLUTION ELECTRON-MICROSCOPY INVESTIGATION OF ARGON-ION IMPLANTATION-INDUCED AMORPHIZATION OF SILICON [J].

CLAVERIE, A ;

VIEU, C ;

FAURE, J ;

BEAUVILLAIN, J .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (09) :4415-4423

[7] RANGE DISTRIBUTION THEORY BASED ON ENERGY-DISTRIBUTION OF IMPLANTED IONS [J].

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ISHIWARA, H .

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[8]

GIBBONS JF, 1975, PROJECTED RANGE STAT

[9]

LINDHARD J, 1968, KGL DANSKE VIDENSKAB, V10

[10]

MASZARA WP, 1985, BEAM SOLID INTERACT, V51, P381

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