The role of atomic hydrogen for formation of quantum dots by self-organizing process in MBE

被引：10

作者：

Chun, YJ

Nakajima, S

Okada, Y

Kawabe, M

机构：

[1] Institute of Materials Science, University of Tsukuba, Tsukuba City

来源：

PHYSICA B | 1996年 / 227卷 / 1-4期

关键词：

In(Ga)As quantum dot; self-organizing process; atomic hydrogen;

D O I：

10.1016/0921-4526(96)00425-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have investigated the effect of atomic hydrogen (H) irradiation on formation of In(Ga)As quantum dots (QDs) by self-organizing process. For InGaAs QDs, the size of dots decreased from 40 to 20 nm by atomic H irradiation. The high density InGaAs QDs are formed uniformly by atomic H irradiation, while they are distributed mainly along the step edges without H irradiation. Atomic H also has beneficial effects on optical properties of QDs such as photoluminescence (PL) intensities and line widths. The waiting time dependence before GaAs cap layer deposition on the optical properties of QDs is also investigated. PL characteristics are improved in shorter waiting time.

引用

收藏

页码：299 / 302

页数：4

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