Imaging performance of single-element CdZnTe detectors for digital radiography

We measured the charge collection efficiency and energy resolution at 60 keV and 122 keV for single-element Cd0.8Zn0.2Te semiconductor detectors 2x10x1O mm(3) irradiated transverse to the electric field, in view of their possible use for digital radiography. Charge collection efficiency, energy resolution and charge collection time have been measured as a function of the bias voltage. The detector's imaging performance was evaluated, using a scanning procedure, by measurements (at 60 keV) of the line spread function and edge response function of the imaging system; metallic test objects and bone tissue were imaged. Image contrast values as low as C=10% were obtained for a minimum 5:1 S.N.R..