Monolithic pin-HEMT 1.55 mu m photoreceiver on InP with 27 GHz bandwidth

被引：17

作者：

Umbach, A ^{[1
]}

vanWaasen, S ^{[1
]}

Auer, U ^{[1
]}

Bach, HG ^{[1
]}

Bertenburg, RM ^{[1
]}

Breuer, V ^{[1
]}

Ebert, W ^{[1
]}

Janssen, G ^{[1
]}

Mekonnen, GG ^{[1
]}

Passenberg, W ^{[1
]}

Schlaak, W ^{[1
]}

Schramm, C ^{[1
]}

Seeger, A ^{[1
]}

Tegude, FJ ^{[1
]}

Unterborsch, G ^{[1
]}

机构：

[1] UNIV DUISBURG GESAMTHSCH,DEPT SOLID STATE ELECT,D-47057 DUISBURG,GERMANY

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 23期

关键词：

integrated optoelectronics; high electron mobility transistors; optical receivers; indium phosphide;

D O I：

10.1049/el:19961421

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A monolithically integrated photoreceiver is presented, based on a new integration concept comprising a waveguide integrated photodiode and a travelling wave GaInAs/AlInAs-HEMT amplifier. A record 3 dB bandwidth of 27 GHz is measured and a clearly open eye is obtained for a 20 Gbit/s pseudo-random bit stream. This high speed performance was achieved with photolithographically defined 0.7 mu m gate length HEMTs, regrown by MBE on semi-insulating GaInAsP waveguide layers.

引用

页码：2142 / 2143

页数：2

共 6 条

[1]

FAY F, 1996, IEEE PHOTONIC TECH L, V8, P679

[2] HIGH-SPEED, MONOLITHICALLY INTEGRATED PIN-HEMT PHOTORECEIVER FABRICATED ON INP WITH 18GHZ BANDWIDTH [J].

KLEPSER, BUH ;

SPICHER, J ;

BECK, M ;

BERGAMASCHI, C ;

PATRICK, W ;

BACHTOLD, W .

ELECTRONICS LETTERS, 1995, 31 (21) :1831-1833

[3] 15GBIT/S PIN/HBT OPTOELECTRONIC INTEGRATED PHOTORECEIVER MODULE REALIZED USING MOVPE MATERIAL [J].

LUNARDI, LM ;

CHANDRASEKHAR, S ;

GNAUCK, AH ;

BURRUS, CA ;

DENTAI, AG ;

RIOS, JMM .

ELECTRONICS LETTERS, 1995, 31 (14) :1185-1186

[4] Design and realisation of waveguide integrated AlInAs/GaInAs HEMTs regrown by MBE for high bit rate optoelectronic receivers on InP [J].

Schramm, C ;

Schlaak, W ;

Mekonnen, GG ;

Passenberg, W ;

Umbach, A ;

Seeger, A ;

Wolfram, P ;

Bach, HG .

ELECTRONICS LETTERS, 1996, 32 (12) :1139-1141

[5]

UMBACH A, 1995, P 21 EUR C OPT COMM, P1075

[6]

VANWAASEN S, 1996, P 8 INT C INP REL MA, P642

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