Numerical simulations of contact resistance in organic thin-film transistors

被引:73
作者
Hill, IG [1 ]
机构
[1] Dalhousie Univ, Dept Phys, Halifax, NS B3H 3J5, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
D O I
10.1063/1.2112189
中图分类号
O59 [应用物理学];
学科分类号
摘要
The origin of the source/drain contact resistance reported in studies of pentacene-based organic thin-film transistors (OTFTs) has been investigated using numerical device simulations. Quantitative agreement with published contact resistance values is obtained, using reasonable values for the physical parameters describing both the semiconductor material and the metal/organic interfaces. In particular, the difference in contact resistance measured in top and bottom contact OTFTs has been reproduced. (C) 2005 American Institute of Physics.
引用
收藏
页码:1 / 3
页数:3
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