Ammonia-sensing characteristics of Pt and SiO2 doped SnO2 materials

被引：129

作者：

Wang, YD ^{[1
]}

Wu, XH ^{[1
]}

Su, Q ^{[1
]}

Li, YF ^{[1
]}

Zhou, ZL ^{[1
]}

机构：

[1] Yunnan Univ, Dept Mat Sci & Engn, Kunming 650091, Yunnan, Peoples R China

来源：

SOLID-STATE ELECTRONICS | 2001年 / 45卷 / 02期

关键词：

ammonia; tin dioxide; gas sensor; sensitivity; stability;

D O I：

10.1016/S0038-1101(00)00231-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The gas-sensing characteristics of doped SnO2 materials for ammonia were investigated in this paper. A good formula of ammonia sensitive materials has been achieved. The phase of sensitive material was characterized by X-ray diffraction. The gas sensor of indirect heating that was made by this sensitive material had high sensitivity to ammonia gas and stability. Infrared was used to study the reacting products of NH3 on the surface of the material. The sensitive mechanism of sensor was analyzed and discussed. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：347 / 350

页数：4

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