Photoconductivity of TlGaSe2 layered single crystals

被引：60

作者：

Ashraf, IM ^{[1
]}

Abdel-Rahman, MM ^{[1
]}

Badr, AM ^{[1
]}

机构：

[1] S Valley Univ, Dept Phys, Fac Sci Aswan, Aswan, Egypt

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2003年 / 36卷 / 02期

关键词：

D O I：

10.1088/0022-3727/36/2/306

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The photoconductivity of TlGaSe2 layered single crystals are investigated in the temperature range 78-300 K. Both the ac-photoconductivity (ac-PC) and the spectral distribution of the photocurrent were studied at different values of light intensity, applied voltage and temperature. Dependences of carrier lifetime on light intensity, applied voltage and temperature have been investigated as results of the ac-PC and dc-photoconductivty (dc-PC) measurements. The temperature dependence of the energy gap width was described as a result of studying the dc-PC.

引用

页码：109 / 113

页数：5

共 26 条

[1]

ABDULLAEVA SG, 1984, FIZ TVERD TELA+, V26, P618

[2] Radiative donor-acceptor pair recombination in TlInS2 single crystals [J].