Single-mode spontaneous emission from a single quantum dot in a three-dimensional microcavity

被引：314

作者：

Solomon, GS ^{[1
]}

Pelton, M

Yamamoto, Y

机构：

[1] Stanford Univ, Ginzton Lab, JST, ICORP,Quantum Entanglement Project, Stanford, CA 94305 USA

[2] Stanford Univ, Solid State Photon Lab, Stanford, CA 94305 USA

[3] NTT, Basic Res Labs, Atsugi, Kanagawa 24301, Japan

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 86卷 / 17期

关键词：

D O I：

10.1103/PhysRevLett.86.3903

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The spontaneous emission from an isolated semiconductor quantum dot state has been coupled with high efficiency to a single, polarization-degenerate cavity mode. The InAs quantum dot is epitaxially formed and embedded in a planar epitaxial microcavity, which is processed into a post of submicron diameter. The single, quantum dot spontaneous emission lifetime is reduced from the noncavity value of 1.3 ns to 280 Fs, resulting in a single-mode spontaneous emission coupling efficiency of 78%.

引用

页码：3903 / 3906

页数：4

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