High-Q wet-etched GaAs microdisks containing InAs quantum boxes

被引：243

作者：

Gayral, B ^{[1
]}

Gérard, JM ^{[1
]}

Lemaitre, A ^{[1
]}

Dupuis, C ^{[1
]}

Manin, L ^{[1
]}

Pelouard, JL ^{[1
]}

机构：

[1] France Telecom, CNET, DTD, CDP, F-92220 Bagneux, France

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 13期

关键词：

D O I：

10.1063/1.124894

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A two-steps wet-etching fabrication process producing high-quality GaAs microdisks is presented. We report an optical characterization of these microdisks, using the photoluminescence of InAs quantum boxes as an internal light source. Thanks to an improved smoothness of the microdisk sidewall, cavity Q's as high as 12 000 are observed, which opens very challenging novel application prospects for semiconductor microdisks. (C) 1999 American Institute of Physics. [S0003-6951(99)00339-3].

引用

页码：1908 / 1910

页数：3

共 13 条

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