Room temperature continuous wave lasing characteristics of GaInAsP/InP microdisk injection laser

被引：38

作者：

Fujita, M ^{[1
]}

Inoshita, K ^{[1
]}

Baba, T ^{[1
]}

机构：

[1] Yokohama Natl Univ, Div Elect & Comp Engn, Yokohama, Kanagawa 240, Japan

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 03期

关键词：

D O I：

10.1049/el:19980109

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors have achieved continuous-wave lasing in a GaInAsP/InP microdisk injection laser at room temperature for the first time. A record low threshold current of 150 mu A was demonstrated at a wavelength of 1.63 mu M with a high cavity Q of 3300.

引用

页码：278 / 279

页数：2

共 3 条

[1] Lasing characteristics of GaInAsP-InP strained quantum-well microdisk injection lasers with diameter of 2-10 mu m
Baba, T
Fujita, M
Sakai, A
Kihara, M
Watanabe, R
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (07) : 878 - 880
[2] Photonic crystals and microdisk cavities based on GaInAsP-InP system
Baba, T
[J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (03) : 808 - 830
[3] ROOM-TEMPERATURE OPERATION OF MICRODISK LASERS WITH SUBMILLIAMP THRESHOLD CURRENT
LEVI, AFJ
SLUSHER, RE
MCCALL, SL
TANBUNEK, T
COBLENTZ, DL
PEARTON, SJ
[J]. ELECTRONICS LETTERS, 1992, 28 (11) : 1010 - 1012

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