Cobalt-doped ZnO - a room temperature dilute magnetic semiconductor

被引：131

作者：

Fitzgerald, CB ^{[1
]}

Venkatesan, M ^{[1
]}

Lunney, JG ^{[1
]}

Dorneles, LS ^{[1
]}

Coey, JMD ^{[1
]}

机构：

[1] Univ Dublin Trinity Coll, Dept Phys, Dublin 2, Ireland

来源：

APPLIED SURFACE SCIENCE | 2005年 / 247卷 / 1-4期

基金：

爱尔兰科学基金会;

关键词：

cobalt-doped ZnO; magnetic semiconductor; ferromagnetism;

D O I：

10.1016/j.apsusc.2005.01.043

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Room temperature ferromagnetism is observed in thin films of ZnO doped with 1-25 at.% cobalt. Bulk samples were synthesized by a solid-state reaction technique and (110) textured thin films were prepared by pulsed laser deposition on R-cut sapphire substrates. Films are semiconducting and transparent. Resisitivity increases with increasing cobalt content. Room temperature magnetic moments of 0.5-5 mu(B) per Co atom were measured in the thin films. Optical spectrometry indicates that cobalt enters the tetrahedral sites of the wurtzite structure as Co2+. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：493 / 496

页数：4

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