Highly textured laser annealed Pb(Zr0.52Ti0.48)O3 thin films

被引：18

作者：

Bharadwaja, S. S. N. ^{[1
]}

Griggio, F. ^{[2
]}

Kulik, J. ^{[1
]}

Trolier-McKinstry, S. ^{[1
,2
]}

机构：

[1] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA

[2] Penn State Univ, Mat Sci & Engn Dept, University Pk, PA 16802 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 04期

基金：

美国国家科学基金会;

关键词：

PIEZOELECTRIC PROPERTIES; DOMAIN-WALL; ORIENTATION; DEPOSITION;

D O I：

10.1063/1.3615295

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

RF sputtered amorphous Pb(Zr0.52Ti0.48)O-3 (PZT) films (similar to 300-350 nm in thickness) on {111}Pt/Ti/SiO2/Si or {001}PbTiO3/Pt/Ti/SiO2/Si substrates were laser crystallized to obtain highly textured {111} and {001} PZT thin films. The measured remanent polarizations and coercive fields were 31 mu C/cm(2) and 86 kV/cm for {001} films and 24 mu C/cm(2) and 64 kV/cm for {111} oriented PZT films, respectively. The maximum e(31, f) piezoelectric charge coefficients are similar to - 11 C/m(2) for {001} and similar to - 9 C/m(2) for {111} PZT thin films respectively. (C) 2011 American Institute of Physics. [doi:10.1063/1.3615295]

引用

页数：3

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