Growth and properties of gradient free sol-gel lead zirconate titanate thin films

被引:139
作者
Calame, F. [1 ]
Muralt, P. [1 ]
机构
[1] Ecole Polytech Fed Lausanne, Ceram Lab, CH-1015 Lausanne, Switzerland
关键词
D O I
10.1063/1.2472529
中图分类号
O59 [应用物理学];
学科分类号
摘要
Pb(Zr-x,Ti1-x)O-3 thin films of homogeneous composition were synthesized by means of a modified sol-gel route on Pt(111)/TiOx/SiO2/Si substrates. The gradient in B-site composition as obtained by standard routes could be lowered, reducing Zr concentration fluctuations form +/- 12 to +/- 2.5 at. %. The 2 mu m thick, dense and crack-free films exhibited a {100}-texture index of 98.4%. Grain diameters increased by 50%. Dielectric and piezoelectric properties were remarkably improved. The relative dielectric constant epsilon(33,f) was obtained as 1620, and the remanent transverse piezoelectric coefficient e(31,f) was measured as -17.7 Cm-2. (c) 2007 American Institute of Physics.
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