Measurement of the effective transverse piezoelectric coefficient e31,f of AlN and Pb(Zrx,Ti1-x)O3 thin films

被引：247

作者：

Dubois, MA ^{[1
]}

Muralt, P ^{[1
]}

机构：

[1] Swiss Fed Inst Technol, Lab Ceram, DMX LC Ecublens, CH-1015 Lausanne, Switzerland

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1999年 / 77卷 / 02期

关键词：

piezoelectric materials; thin films;

D O I：

10.1016/S0924-4247(99)00070-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effective piezoelectric transverse coefficient e(31,f) was measured on various lead zirconate-titanate (PZT) and aluminum nitride thin films. The measurement set-up is based on the collection of the electric charges created by the forced deflection of a Si cantilever coated with a piezoelectric material. The maximum value was obtained from a tetragonal composition of PZT (45/55 Zr/Ti ratio) and was equal to 8.3 C/m(2). The ALN layer exhibited 97% of the theoretical value calculated from single crystal data, i.e., e(31,f)- = 1.02 C/m(2) (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：106 / 112

页数：7

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