Relaxation of carriers in terbium-doped ZnO nanoparticles

被引：49

作者：

Liu, SM ^{[1
]}

Liu, FQ ^{[1
]}

Wang, ZG ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

CHEMICAL PHYSICS LETTERS | 2001年 / 343卷 / 5-6期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1016/S0009-2614(01)00740-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Terbium ions were successfully incorporated in nano-sized zinc oxide particles with a doping concentration up to 3% by using a wet chemical route. Four narrow emission peaks of Tb3+ ions and a broad emission band of the surface states on ZnO nano-hosts were observed for all Tb-doped nanoparticles. Relaxation of carriers from excited states of ZnO hosts to rare earth (RE) dopants is disclosed by the fact that the emission intensity of Tb3+ centers increases with increased Tb content at the expense of the emission from surface defect states in ZnO matrix. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：489 / 492

页数：4

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