Molecular Weight-Induced Structural Transition of Liquid-Crystalline Polymer Semiconductor for High-Stability Organic Transistor

被引:22
作者
Kim, Do Hwan [1 ]
Lee, Jiyoul [1 ]
Park, Jeong-Il [1 ]
Chung, Jong Won [1 ]
Lee, Wi Hyoung [2 ]
Giri, Gaurav [3 ]
Yoo, Byungwook [1 ]
Koo, Bonwon [1 ]
Kim, Joo Young [1 ]
Jin, Yong Wan [1 ]
Cho, Kilwon [2 ]
Lee, Bang-Lin [1 ]
Lee, Sangyoon [1 ]
机构
[1] Samsung Adv Inst Technol, Display Device Lab, Yongin 446712, South Korea
[2] Pohang Univ Sci & Technol, Dept Chem Engn, Pohang 790784, South Korea
[3] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA
关键词
FIELD-EFFECT MOBILITY; THIN-FILM TRANSISTORS; CHARGE-TRANSPORT; REGIOREGULAR POLY(3-HEXYLTHIOPHENE); POLYTHIOPHENE; COPOLYMERS; MORPHOLOGY;
D O I
10.1002/adfm.201101021
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In order to fabricate polymer field-effect transistors (PFETs) with high electrical stability under bias-stress, it is crucial to minimize the density of charge trapping sites caused by the disordered regions. Here we report PFETs with excellent electrical stability comparable to that of single-crystalline organic semiconductors by specifically controlling the molecular weight (MW) of the donor-acceptor type copolymer semiconductors, poly (didodecylquaterthiophene-alt-didodecylbithiazole). We found that MW-induced thermally structural transition from liquid-crystalline to semi-crystalline phases strongly affects the device performance (charge-carrier mobility and electrical bias-stability) as well as the nanostructures such as the molecular ordering and the morphological feature. In particular, for the polymer with a MW of 22 kDa, the transfer curves varied little (Delta V-th = 3 similar to 4 V) during a period of prolonged bias stress (about 50 000 s) under ambient conditions. This enhancement of the electrical bias-stability can be attributed to highly ordered liquid-crystalline nanostructure of copolymer semiconductors on dielectric surface via the optimization of molecular weights.
引用
收藏
页码:4442 / 4447
页数:6
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