Molecular-beam epitaxial growth and characterization of Bi-Sr-Co-O thin films

被引：13

作者：

Tsukada, I

Nose, M

Uchinokura, K

机构：

[1] Department of Applied Physics, University of Tokyo, Bunkyo-ku, Tokyo 113

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 80卷 / 10期

关键词：

D O I：

10.1063/1.363568

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The thin-film growth of Co oxides and layered Bi-Sr-Co-O compounds was investigated in detail under an ozone ambient. All samples were prepared using a molecular-beam-epitaxy machine modified for the growth of Bi-based high-temperature superconductors. The temperature versus pressure phase diagram of Co oxidation was determined for growth on Nd:YAlO3 substrates. According to the phase diagram, Bi2Sr2CoO6+alpha and Bi2Sr3Co2O9+beta were grown on Nd:YAlO3 (001). The boundary between the stable regions of them is basically the same as that between CoO and Co3O4. Bi2Sr2CoO6+alpha was an insulator with an activation energy of approximately 0.20 +/- 0.01 eV. Bi2Sr3Co2O9+beta shows metallic behavior down to 80 K, and the carriers are revealed to be holes by Hall-effect measurement. (C) 1996 American Institute of Physics.

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页码：5691 / 5703

页数：13

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