Ultra-wide-band (> 40 GHz) submicron InGaAs metal-semiconductor-metal photodetectors

被引：15

作者：

Bottcher, EH ^{[1
]}

Droge, E ^{[1
]}

Bimberg, D ^{[1
]}

Umbach, A ^{[1
]}

Engel, H ^{[1
]}

机构：

[1] HEINRICH HERTZ INST NACHRICHTENTECH BERLIN GMBH,D-10587 BERLIN,GERMANY

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1996年 / 8卷 / 09期

关键词：

Manuscript received March 11; 1996; revised June 2; 1996. This work was supported in part by the Deutschc Forschungsgemeinschaft. E. H. Bottchcr; E; Drogc; and D. Bimberg are with the Technische Universitit Berlin; Iiistitut fur Festkorperphysik I; D-10623; Berlin; Germany. A. Umbach and H. Engcl arc with the Heinrich-Hertz-Institut fur Nachrich-tcntcchnik Bcrlin CmbH. D-10587 Berlin; Germany. Publisher Item Identifier S 1041-1 135(96)06551-2;

D O I：

10.1109/68.531844

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Submicron feature size InGaAs metal-semiconductor-metal (MSM) photodetectors with 3-dB bandwidths in excess of 40 GHz are demonstrated, Devices with a 0.3-mu m-thick active layer and an interelectrode spacing of less than or equal to 0.5 mu m show a roll-off of the frequency response of less than or equal to 2 dB up to 40 GHz when operated at 5-V bias under front illumination with 1.3-mu m light.

引用

页码：1226 / 1228

页数：3

共 7 条

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