Doping-dependent charge injection into regioregular poly(3-hexylthiophene)

被引:56
作者
Rep, DBA [1 ]
Morpurgo, AF [1 ]
Klapwijk, TM [1 ]
机构
[1] Delft Univ Technol, Dept Nanosci, Fac Sci Appl, NL-2628 CJ Delft, Netherlands
关键词
conjugated polymer; P3HT; injection; doping; contact resistance; Schottky barrier;
D O I
10.1016/S1566-1199(03)00016-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigate charge injection from gold into regioregular poly(3-hexylthiophene) (P3HT) as a function of doping, by studying the nonlinear current-voltage characteristics of Au/P3HT/Au devices at different doping levels. The comparison of these characteristics allows us to distinguish contact-limited from bulk-limited transport. We demonstrate that there is a significant barrier to charge-injection from the contacts into the polymer, in spite of the good alignment of the Au work-function relative to the energy gap of P3HT and that the contact limitation is particularly strong at low doping levels. The contact resistance with a Ti electrode is similarly doping-level dependent. Our results show that the ability to control the doping level in organic semiconductors can be used as a tool to investigate the electronic properties of devices prepared from these materials. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:201 / 207
页数:7
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