Effects of interface micro structure in crystallization of ZnO thin films prepared by radio frequency sputtering

被引:74
作者
Yoshino, Y [1 ]
Inoue, K [1 ]
Takeuchi, M [1 ]
Ohwada, K [1 ]
机构
[1] Murata Mfg Co Ltd, Yokohama Res & Dev Ctr, Kanagawa 226, Japan
关键词
D O I
10.1016/S0042-207X(98)00257-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
ZnO thin films have been formed by radio frequency sputtering on glass, Al, Au and R-cut sapphire substrates. Micro structures of ZnO/substrate interfaces have been observed by transmission electron microscope and the surface morphology of the substrates has been measured by atomic force microscope. An amorphous layer is observed at the ZnO/glass interface and also a thicker amorphous layer at the ZnO/Al interface. No amorphous layers are observed at ZnO/Au and ZnO/sapphire interfaces, and direct orientation of ZnO thin films begins at the interface of both substrates. These results clearly demonstrate that crystallization of ZnO thin films prepared by radio frequency sputtering is strongly influenced by the surface crystallinity and morphology of substrates. Epitaxially grown ZnO thin films are confirmed, both on R-cut sapphire and on Au, by cross section transmission electron microscope. (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:601 / 607
页数:7
相关论文
共 17 条
[1]  
CHUBACHI M, 1974, JPN J APPL PHYS S, V1, P737
[2]  
Hata T., 1979, JPN J APPL PHYS, V18, P219, DOI [10.7567/JJAPS.18S1.219, DOI 10.7567/JJAPS.18S1.219]
[3]   Preparation of crystallized zinc oxide films on amorphous glass substrates by pulsed laser deposition [J].
Hayamizu, S ;
Tabata, H ;
Tanaka, H ;
Kawai, T .
JOURNAL OF APPLIED PHYSICS, 1996, 80 (02) :787-791
[4]   CHARACTERISTICS OF ZINC-OXIDE FILMS ON GLASS SUBSTRATES DEPOSITED BY RF-MODE ELECTRON-CYCLOTRON-RESONANCE SPUTTERING SYSTEM [J].
KADOTA, M ;
KASANAMI, T ;
MINAKATA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (5B) :2341-2345
[5]  
KASUGA M, 1964, OYO BUTURI, V33, P1027
[6]  
KINBARA A, 1977, HAKUMAKU, P40
[7]   RF DIODE SPUTTERED ZNO TRANSDUCERS [J].
LARSON, JD ;
WINSLOW, DK ;
ZITELLI, LT .
IEEE TRANSACTIONS ON SONICS AND ULTRASONICS, 1972, SU19 (01) :18-&
[8]   VARIATION OF C-AXIS ORIENTATION OF ZNO THIN-FILMS DEPOSITED BY DC DIODE SPUTTERING [J].
MINAKATA, M ;
CHUBACHI, N ;
KIKUCHI, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (03) :474-475
[9]  
Minami T., 1984, JPN J APPL PHYS, V23, P280
[10]   STRUCTURES AND SAW PROPERTIES OF RF-SPUTTERED SINGLE-CRYSTAL FILMS OF ZNO ON SAPPHIRE [J].
MITSUYU, T ;
ONO, S ;
WASA, K .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2464-2470