Fully passivated W-band InAlAs/InGaAs/InP monolithic low noise amplifiers

被引：14

作者：

Wang, H

Ng, GI

Lai, R

Hwang, Y

Lo, DCW

Dia, R

Freudenthal, A

Block, T

机构：

[1] TRW, Electronic Systems and Technolocy Division, Rcdondo Reach, CA 90278, M5/1130F, One Space Park

来源：

IEE PROCEEDINGS-MICROWAVES ANTENNAS AND PROPAGATION | 1996年 / 143卷 / 05期

关键词：

low noise amplifiers; HEMT technology;

D O I：

10.1049/ip-map:19960506

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The development of W-band monolithic low noise amplifiers (LNAs) using a fully passivated 0.1 mu m pseudomorphic InAlAs/InGaAs/InP low noise HEMT technology is presented. Both wafer passivation and stabilisation bakes have been introduced, for the first time, to the InP HEMT MMIC process to make it more suitable for production. A three-stage single-ended 94 GHz monolithic LNA shows a measured noise figure of 3.3 dB and 20 dB associated gain. A measured noise figure of 2.3 dB is achieved for a single-stage MMIC LNA at 94 GHz. These results represent state-of-the-art performance of HEMT MMIC LNAs at this frequency. The effects due to SiN passivation for both HEMT device and circuit performance are also addressed.

引用

页码：361 / 366

页数：6

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