Nanocrystalline p-type silicon films produced by hot wire plasma assisted technique

被引：3

作者：

Ferreira, I ^{[1
]}

Fernandes, FB

Vilarinho, P

Fortunato, E

Martins, R

机构：

[1] Univ Nova Lisboa, Fac Ciencias & Tecnol, CENIMAT, Dept Ciencias Mat, P-2829516 Caparica, Portugal

[2] CEMOP, UNINOVA, P-2829516 Caparica, Portugal

[3] Univ Aveiro, UIMC, Dept Engn Ceram & Vidro, P-10193 Aveiro, Portugal

来源：

MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS | 2001年 / 15卷 / 1-2期

关键词：

hot wire plasma assisted; nanocrystalline silicon; p-type films;

D O I：

10.1016/S0928-4931(01)00249-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report in this paper the influence of the rf power on the properties of p-type silicon thin films produced by hot wire plasma assisted chemical vapor deposition (HWPA-CVD) technique, using a gas mixture containing SiH4, B2H6, CH4 and H-2. The influence of the rf power in the film morphology, its structure and its composition has been determined by means of scanning electron microscopy (SEM), X-ray diffraction (XRD) and infrared spectroscopy. The electrical dark conductivity, activation energy, optical band gap and growth rate values for the different rf power was also evaluated. The data achieved show that rf power rules the surface morphology, the film structure and its electrical characteristics. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：137 / 140

页数：4

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