Role of the hot wire filament temperature on the structure and morphology of the nanocrystalline silicon p-doped films

被引：6

作者：

Ferreira, I ^{[1
]}

Aguas, H

Mendes, L

Martins, R

机构：

[1] Univ Nova Lisboa, Fac Ciencias & Tecnol, Dept Mat Sci, CENIMAT, P-2825 Monte De Caparica, Portugal

[2] Univ Nova Lisboa, CEMOP, P-2825 Monte De Caparica, Portugal

来源：

APPLIED SURFACE SCIENCE | 1999年 / 144-45卷

关键词：

polycrystalline thin films; polycrystalline surfaces; silicon carbide;

D O I：

10.1016/S0169-4332(98)00905-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Nanocrystalline p-doped silicon films were deposited at low substrate temperatures (around 200 degrees C) in a hot wire reactor. In this paper we present the results on the role of the hydrogen dilution and filament temperature on the film's structure, composition, morphology and transport properties. The film's structure changes from honeycomb-like to a granular needle shape as the filament temperature changes from about 2000 degrees C and hydrogen dilution 87%, to values above 2100 degrees C and hydrogen dilution 90%, respectively. The nanocrystalline silicon-based films produced have optical gaps varying from 1.6 to 1.95 eV, with conductivities up to 0.2 S cm(-1) and grain sizes (obtained by X-ray diffraction) in the range of 10-30 nm. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：690 / 696

页数：7

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