Role of the deposition conditions on the properties presented by nanocrystallite silicon films produced by hot wire

被引：11

作者：

Martins, R

Ferreira, I

Fernandes, F

Fortunato, E

机构：

[1] Univ Nova Lisboa, Fac Ciencias & Tecnol, Dept Mat Sci, P-2825 Monte De Caparica, Portugal

[2] Univ Nova Lisboa, Ctr Excellence Microelect & Optoelect Proc, P-2825 Monte De Caparica, Portugal

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1998年 / 227卷

关键词：

deposition conditions; crystallite silicon films; hot wire technique;

D O I：

10.1016/S0022-3093(98)00244-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The aim of this work is to study the role of hydrogen dilution and filament temperature on the properties of nanocrystalline silicon thin films (undoped and doped) produced by the hot wire technique. These deposition parameters are correlated to the film's structure, composition and electro-optical properties with special emphasis on boron doped nanocrystalline silicon carbide reported here. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：901 / 905

页数：5

共 8 条

[1] PRODUCTION OF HIGH-QUALITY AMORPHOUS-SILICON FILMS BY EVAPORATIVE SILANE SURFACE DECOMPOSITION [J].